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-{
- "source": [
- "Die",
- "neuerung",
- "sieht",
- "hierfür",
- "gassensoren",
- "vor",
- ", Bei denen",
- "der metalloxid-",
- "halbleiter auf dem",
- "substrat (1)",
- "in form einer amorphen",
- "metalloxid-halbleiter-",
- "dünnschicht",
- "(2) vorliegt."
- ],
- "target": [
- "The",
- "invention",
- "provides",
- "gas sensors",
- "for this purpose",
- ",",
- "in which",
- "the metal-oxide",
- "semiconductor is on the",
- "substrate (1)",
- "in the form of an amorphous",
- "metal-oxide semiconductor",
- "thin layer",
- "(2)."
- ],
- "align": [
- "0-0",
- "1-1",
- "2-2",
- "3-4",
- "4-3",
- "6-6",
- "7-7",
- "8-8",
- "9-9",
- "10-10",
- "11-11",
- "12-12",
- "13-13"
- ],
- "post_edit": "The invention provides gas sensors for this purpose , in which the metal-oxide semiconductor is on the substrate (1) in the form of an amorphous metal-oxide semiconductor thin layer (2).",
- "duration": 1735996,
- "source_value": "die neuerung sieht hierfür gassensoren vor , bei denen der metalloxid @-@ halbleiter auf dem substrat ( 1 ) in form einer amorphen metalloxid @-@ halbleiter @-@ dünnschicht ( 2 ) vorliegt ."
-}